March 15, 2025 - 00:27
A UK-based semiconductor company has made significant strides in electric vehicle (EV) technology by unveiling a groundbreaking gallium nitride (GaN) solution. This advanced technology integrates ICeGaN high electron mobility transistors (HEMTs) with insulated-gate bipolar transistors (IGBTs) within the same module, specifically designed for powertrain applications exceeding 100 kW.
The innovative Combo ICeGaN approach leverages the unique operational capabilities of both ICeGaN and IGBT devices, promising enhanced efficiency and performance in EV inverters. This development marks a pivotal moment in the EV industry, as it addresses the growing demand for more powerful and efficient power electronics to support the increasing capabilities of electric vehicles.
By combining these two technologies, the new GaN solution aims to optimize the performance of electric drivetrains, potentially leading to longer ranges and faster charging times for EVs. As the automotive industry continues to shift towards electrification, this advancement positions itself as a critical component in the future of sustainable transportation.
